Free Newsletter
Register for our Free Newsletters
Newsletter
Zones
Advanced Composites
LeftNav
Aerospace
LeftNav
Amorphous Metal Structures
LeftNav
Analysis and Simulation
LeftNav
Asbestos and Substitutes
LeftNav
Associations, Research Organisations and Universities
LeftNav
Automation Equipment
LeftNav
Automotive
LeftNav
Biomaterials
LeftNav
Building Materials
LeftNav
Bulk Handling and Storage
LeftNav
CFCs and Substitutes
LeftNav
Company
LeftNav
Components
LeftNav
Consultancy
LeftNav
View All
Other Carouselweb publications
Carousel Web
Defense File
New Materials
Pro Health Zone
Pro Manufacturing Zone
Pro Security Zone
Web Lec
Pro Engineering Zone
 
 
 
News

Detecting the spin of a single electron

DOE/Los Alamos National Laboratory : 10 August, 2004  (Technical Article)
University of California scientists working at Los Alamos National Laboratory and at the University of California, Los Angeles have demonstrated the ability to detect the spin of a single electron in a standard silicon transistor. The advance could help facilitate the direct, rather than theoretical, study of the physics of electron spin decoherence, which is a critical step toward manipulating and monitoring the spin of a single electron.
Decoherence is the process in which objects of the quantum world, like electrons, lose their wavelike characteristics by interacting with the surrounding environment. Electron spin control could be crucial for the creation of nanoscale electronics, the magnetic resonance imaging of single molecules and the development of quantum computers.

In research reported in a recent issue of the journal Nature, Los Alamos scientist Ivar Martin, along with his UCLA colleagues Ming Xaio, Eli Yablonovitch and HongWen Jiang, detected electrically the spin resonance of a single electron in the gate oxide of a standard silicon transistor. The spin orientation of the electron was converted to an electrical charge, which was then measured using a device called a Field effect transistor, or FET. An FET can sense current changes in electrostatic charge.

According to Martin, who developed the theory for the effect together with Los Alamos postdoctoral researcher Dima Mozyrsky, 'We believe this is a significant advance in the field of quantum physics. The more that the fields of science and engineering learn about the enigmatic physics of electron spin, the more we will be able to use that knowledge in the future to create nanoscale technologies like spin electronic and quantum computers, that are based on electron spin control.'

The discovery sets the stage for the practical study of single electron spin physics using test transistors in conventional, commercial silicon integrated circuits. Electron spins in semiconductors have proven particularly attractive for such studies because of their long decoherence times.

In addition, single electron spin resonance opens new opportunities in surface science by allowing researchers to individually study single defects and their environments at the semiconductor-insulator interfaces. This may lead to applications in semiconductor technology where design of reliable devices with ever decreasing feature sizes requires detailed understanding of the interfaces at the nanoscale.

The research was funded by the Defense Advanced Research Projects Agency and the Defense MicroElectronics Activity, a United States Department of Defense Agency.
Bookmark and Share
 
Home I Editor's Blog I News by Zone I News by Date I News by Category I Special Reports I Directory I Events I Advertise I Submit Your News I About Us I Guides
 
   © 2012 NewMaterials.com
Netgains Logo