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News

Siliconix launches first power MOSFETs in lead-less PowerPAK 1212-8 Package

Vishay Electronic : 06 July, 2001  (New Product)
The first power MOSFETs to be released in a new lead-less package type that provides dramatic space savings and greatly improved thermal performance have been announced by Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. The new PowerPAK 1212-8 power MOSFETs, which measure just 3.3 mm by 3.3 mm with a 1.07 mm height profile, will be used mainly as power amplifier switches and load switches in cellular phones, pagers, PDAs and other portable electronic systems.
The first power MOSFETs to be released in a new lead-less package type that provides dramatic space savings and greatly improved thermal performance have been announced by Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. The new PowerPAK 1212-8 power MOSFETs, which measure just 3.3 mm by 3.3 mm with a 1.07 mm height profile, will be used mainly as power amplifier switches and load switches in cellular phones, pagers, PDAs and other portable electronic systems.

With its thermal robustness, PowerPAK helps designers give richer feature sets to portable electronic products without having to compromise on size. The PowerPAK 1212-8 package is 11% thinner than a TSSOP-8 and provides an order of magnitude improvement in thermal conductivity, increasing current handling by 13% or more when compared with any other device with a comparable footprint. Power dissipation capability more than doubles, increasing from 1.75 W to 3.8 W, as compared to other devices with a TSSOP-8-size footprint or smaller.

PowerPAK devices achieve this superior thermal performance by providing a direct thermal path from the die to the printed circuit board. And, unlike power MOSFETs with an exposed die, PowerPAK's design provides a consistent footprint regardless of the particular silicon used in a given device. This eliminates the need for retooling to accommodate devices with different on-resistance ratings.

The three single p-channel devices released offer a choice of -12-V (Si7405DN) or -20-V (Si7401DN and Si7403DN) breakdown voltages. On-resistance at a 4.5-V gate drive is just 16 mΩ for the Si7405DN, which can handle up to -13 A of current. For applications requiring the additional headroom of a 20-V breakdown voltage combined with minimal conduction losses, the Si7401DN offers a maximum rDS(on) rating of 21 mΩ and maximum current handling of -11 A. For cost-sensitive applications where on-resistance is not as critical, the Si7403DN PowerPAK combines the same thermal capabilities as the Si7401DN and Si7405DN with a maximum rDS(on) of 100 mΩ.

Samples and production quantities of the Si7401DN, Si7403DN and Si7405DN are available now, with lead times of four to six weeks for larger orders.
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