NEW VISHAY SILICONIX POWER MOSFETS IN THERMALLY ENHANCED POWERPAK 1212 8 PACKAGE

Main Menu | News By Date | News By Supplier | News By Category | About Us

NEW VISHAY SILICONIX POWER MOSFETS IN THERMALLY ENHANCED POWERPAK 1212 8 PACKAGE
26 April 2006 - Vishay Electronic

Seventeen new power MOSFETs that offer exceptionally low on-resistance values down to 3.7 milliohms in the compact PowerPAK 1212 8 package were released today by Vishay Intertechnology, Inc. These TrenchFET Gen II devices deliver significant space savings with dimensions of just 3.3 mm by 3.3 mm by 1 mm, just 1/3 the size of the SO 8 package, as well as low thermal resistance of 2 degrees Celsius per Watt for an eightfold improvement when compared with SO 8 devices.

Seventeen new power MOSFETs that offer exceptionally low on-resistance values down to 3.7 milliohms in the compact PowerPAK 1212 8 package were released today by Vishay Intertechnology, Inc.

These TrenchFET Gen II devices deliver significant space savings with dimensions of just 3.3 mm by 3.3 mm by 1 mm, just 1/3 the size of the SO 8 package, as well as low thermal resistance of 2 degrees Celsius per Watt for an eightfold improvement when compared with SO 8 devices.

Intended for synchronous rectification, synchronous buck, and intermediate switching applications in point of load converters and high-density dc-to-dc converters used in datacom systems, the new power MOSFETs enable designers to reduce board space dramatically and/or increase functionality without sacrificing performance. With their excellent electrical performance, the power MOSFETs introduced today serve as a viable replacement for SO-8 devices in many applications.

The 12-V through 40-V single n-channel devices released today feature on-resistance values ranging from 3.7 milliohms to 10 milliohms at a 4.5-V gate drive, and they include the 12-V Si7104DN, 20-V Si7106DN, Si7108DN, and Si7110DN; 30-V Si7112DN and Si7114DN; and 40-V Si7116DN.

Dual n-channel devices released today offer on-resistance values down to 36 milliohms and include the 30-V Si7212DN and Si7214DN, 40-V Si7222DN, and 60-V Si7220DN.

Also being released today in the PowerPAK 1212-8 package are the single-channel 60 V Si7120DN, 75-V Si7812DN, 150 V Si7818DN, 220-V Si7302DN, and 250-V Si7802DN. These devices feature on-resistance values ranging from 135 milliohms to 435 milliohms at a 10-V gate drive. The 200-V Si7820DN was previously released.

Samples and production quantities of the new power MOSFETs in the PowerPAK 1212-8 package are available now, with lead times of 12 weeks for larger orders.

http://www.vishay.com

About: Vishay Electronic
Vishay Transducers is a division of Vishay Measurements Group. Vishay Measurements Group develops, manufactures, and markets a broad range of sensors for a wide variety of test and measurement applications. These include electrical resistance strain gages for both stress analysis testing and transducer manufacturing applications, load cells for approved weighing applications, force transducers, instrumentation, hybrid strain gage assemblies and bonding services.

Vishay, a Fortune 1,000 Company listed on the NYSE, is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, and transducers). The Company's components can be found in products manufactured in a very broad range of industries worldwide. Vishay is headquartered in Malvern, Pennsylvania, and has operations in 17 countries employing over 26,000 people.

More News:
  • For April 2006
  • From Vishay Electronic
  • For Sensors