NEW HALF-BRIDGE N CHANNEL MOSFET DRIVER FEATURES HIGH 4 A DRIVE CAPABILITY
09 February 2004 - Vishay Electronic

Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc, today announced a new high-speed, half-bridge, n channel MOSFET driver IC designed for use in high-frequency, high-current, single- or multiphase dc to dc converters for desktop and notebook computers and fixed telecom systems.

The new SiP41101 MOSFET driver works in systems with supply voltages from 4.5 V up to 30 V. Designed to supply output currents up to 4 A, the MOSFET driver operates at switching frequencies of 250 kHz to 1 MHz with a driver impedance of only 0.5 ohms, allowing it to be used effectively with low-on-resistance power MOSFETs.

An internal bootstrap diode, which allows the SiP41101 to drive an n channel high-side MOSFET, reduces external component count, while the SiP41101's internal break-before-make circuitry prevents shoot-through current in the external MOSFETs. A synchronous enable control pin serves to disable the low-side or synchronous MOSFET to maximize efficiency under low output current conditions. The new MOSFET driver's internal under-voltage lockout feature prevents driving of the MOSFET gates when the supply voltage (at VDD) is less than is specified, thereby ensuring that output MOSFETs are only turned on when sufficient gate voltage is present.

The SiP41101 is delivered in a 16-pin TSSOP package and is rated for operation over an industrial temperature range of −40 °C to +85 °C.

Samples and production quantities of the SiP41101 are available now, with lead times of eight weeks for larger orders.

http://www.vishay.com

More News:
  • For February 2004
  • From Vishay Electronic
  • For Sensors