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NEW 20-V VDS/20-V VGS MOSFETS PROVIDE ON-RESISTANCE DOWN TO 3.2 MΩ
The new devices offer the industry's lowest on-resistance and the lowest on-resistance-times-gate-charge product of any 20-V VDS/20-V VGS thermally enhanced power MOSFETs. Supply output current for CPU systems is increasing rapidly while voltage regulation across the CPU is decreasing. With low on-resistance and gate charge values, these new devices from Vishay Siliconix minimize conduction and switching losses for increased efficiency in 20-V server and desktop core dc-to-dc conversion applications. The devices' 20-V VDS/20-V VGS rating also serves to provide additional headroom in 12-V systems. Thanks to advanced packaging techniques, these new devices can handle up to 70 A in the DPAK and 110 A in the D2PAK, which extends their application beyond servers and computers to automotive systems. Vishay's SUM110N02-03P D2PAK leads the next-best device on the market with 20% lower on-resistance of 3.2 mΩ at 10 V, while the SUM40N02-12P provides the lowest rDS(on) x Qg product in the 20-V VDS/20-V VGS class of devices, just 90. For DPAK-packaged devices, the new SUD70N02-04P offers 25% lower on-resistance than any competing device, with a maximum rating of just 3.7 mΩ. The SUD50N02-12P, meanwhile, provides the lowest rDS(on) x Qg product, just 90, among 20-V VDS/20-V VGS DPAK devices. This figure of 90 is among the lowest on the market even when compared with devices in the 25-V VDS/20-V VGS range. All of the devices announced today intended for low-side applications are optimized with a QGD/QGS ratio of less than 1 to help prevent the MOSFET from going into a "shoot-thru" situation during which both the high and low side are on, creating a short from the input voltage to ground.
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