NEW VISHAY SILICONIX POWER MOSFETS BUILT ON WFET TECHNOLOGY
02 July 2003 - Vishay Electronic

New power MOSFETs built on a breakthrough TrenchFET technology that combines greatly reduced switching losses with ultra-low on-resistance were announced today by Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology.

Reducing gate-drain capacitance by half while maintaining superb on-resistance performance, the new Vishay Siliconix WFET power MOSFETs offer the industry's best r(DS)on x Qgd figure of merit: 60% lower than previous-generation devices. Lower on-resistance means that more power can be converted in less space, and lower gate-drain capacitance means more efficient switching at high frequencies. In a breakthrough that will enable the design of much more efficient dc-to-dc converters, Vishay's new WFET power MOSFET technology combines both capabilities in a single device.

Vishay's innovative WFET power MOSFETs use a thicker gate oxide at the bottom of the silicon trench to enable a two-thirds reduction in Crss with minimal impact on on-resistance performance. Patent-pending techniques allow a further cell-density increase, which lowers on-resistance while maintaining switching performance.

The four WFET power MOSFETs released today are designed to provide efficient high-side operation - running cooler or handling higher output current with the same efficiency, in notebook CPU core dc-to-dc converters in single- and multi-phase configurations with a 20-A (Si4390DY and Si7390DP) to 40-A (Si4392DYand Si7392DP) output current. TheSi4390DYand Si4392DYare offered in the LITTLE FOOT SO-8 and, for improved thermal performance, the Si7390DP and Si7392DPare offered in the PowerPAK SO-8.

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