INDUSTRY'S FIRST 30-V POWER MOSFETS WITH ON-RESISTANCE RATINGS AT 2.5V REDUCE POWER CONSUMPTION
12 October 2001 - Vishay Electronic

The industry's first 30-V power MOSFETs specified for gate drives down to 2.5 V were announced todayby Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology. The three new n-channel TrenchFETs- one each in the TSOP-6, TSSOP-8, and PowerPAK 1212-8 packages- are designed for battery charger switching and protection applicationsin portable electronics including cell phones, PDAs, and pagers, as wellas 26- to 28-V ac adapters.

Until now, designers had to work with on-resistance specifications for gate drives in the range of 4.5 V to 10 V when selecting a power MOSFET with a 30-V breakdown voltage. With rDS(on) specified down to 2.5 V, these three new devices will provide the voltage range designers need for higher-voltage portable applications while delivering low on-resistance performance across the whole 3- to 5-V operating range for batteries. As a result, end products will give users increased battery life and longer periods of use beforere charging is necessary.

The new 30-V devices are aimed at battery switching applications. Packagedin the new PowerPAK 1212-8, the Si7404DN combines on-resistance of just 22 mΩ at a 2.5-V gate drive with a low thermal resistance package measuring 10.56 mm2 with a height profile of just 1.07 mm. The new Si3434DV, in a TSOP-6 measuring 8.69 mm2, provides an on-resistance of50 mΩ at 2.5 V. The new Si6404DQhas an exceptionally low on-resistance of 14 mΩ at a 2.5-V gate drive and is packaged in a 20.46 mm2TSSOP-8.

Samples and production quantities of the Si3434DV, Si6404DQ, and Si7404DNare available now, with lead times of six weeks for larger orders.

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