NEW VISHAY SILICONIX TEMPERATURE-SENSING MOSFET ENHANCES DESIGN FLEXIBILITY
10 August 2001 - Vishay Electronic

A new temperature-sensingpower MOSFET with the industry's lowest on resistance for this device type was announced today by Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. Intended for power switching and other applications where temperature sensing is required such as motor control, solenoid driver and relay replacements, the new device will give automotive and industrial designers a simple means of increasing protection to power circuitry from current overloads and excessive temperatures.

The new Vishay Siliconix SUB50N04-07T offers the lowest on resistance for any temperature protected power MOSFET in a D2PAK - just 7.5 mΩ at a 10-V gate drive. Integrating a power MOSFET on the same chip as two back-to-back poly-silicon diodes, the SUB50N04-07T is rated for a 40-V breakdown voltage and can handle up to 50 A of current. The SUB50N04-07T additionally provides a175°C maximum junction temperature, ensuring reliability in the harsh automotive environment.

The SUB50N04-07T works byusing the falling forward voltage of the on-board diodes to detect increases in device temperature. This voltage is then fed into circuitry allowing the MOSFET to shut off power to the application if excessive temperature is detected. Because the diodes are integrated onto the same chip as the MOSFET, temperature sensing is more accurate than in devices where the MOSFET and diode components are merely co-packaged.

Like other Siliconix devices, the SUB50N04-07T simplifies designs by reducing component count while using standard power MOSFET technology and terminals. This provides designers with a much simpler upgrade path than with devices using an IC process.

Samples and production quantities of the SUB50N04-07T are available now, with lead times of four to six weeks for larger orders.

http://www.vishay.com

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