SIBER A NEW ULTRA-RESOLUTION 248NM BILAYER RESIST SYSTEM
03 September 2002 - Rohm & Haas Co

Shipley's SiBER system is somewhat unique in that it contains the highest concentration of silicon in its top layer, allowing for exceptionally high differential etch transfer into the polymeric bottom layer. An aspect ratio of 10 to 1 can easily be obtained using conventional etching systems. SiBER was developed in the corporate research and development laboratories in Marlborough Massachusetts and will be adopted for use in the most advanced device fabrication applications.

Bi-layer imaging systems have come into vogue recently as the challenge of creating production worthy 100 nm processes continues to be too difficult for single-layer 248nm resist systems.

"Shipley is pleased to provide its customers our new SiBER 248nm resist system. We will continue to push the threshold of high-resolution imaging through novel chemistry developed here at Shipley. We are confident that this is the first of many such developments in the area of bi-layer resist systems to enhance our customers ability to image and transfer sub 100nm features in device production." says Rick Hemond, Marketing Director, Shipley Microelectronics Lithographic Products.

The SiBER System is comprised of a Silicon rich imaging top layer that provides the user a significant degree of newfound resolution within a wide process window. Shipley's top layer materials, SR2400 Series resists, are available in a variety of dilutions for specific customer requirements. Conventional exposure equipment can be used for imaging the SiBER bilayer system, however, the newest step and scan DUV systems, will provide device fabricators increased resolution and process window benefits beyond those of conventional step and scan tools. The product name for the planarizing and light-absorbing polymeric bottom layer is AR2450 Series Underlayer material. The AR2450 Series material is also available in a variety of dilutions to meet the requirements of our customers. The bottom layer provides planar defect-free coatings on the wafer surface while simultaneously offering a chemically matched surface ideally suited for applying the silicon rich, SR2400 Series, top imaging layer resist. Unwanted reflected light energy is suppressed by this layer allowing for the ultimate in feature resolution and critical dimension control of the top layer image.

"Shipley has made great strides in creating a 248nm lithography system that enables 90nm device fabrication design rules. The ultra resolution and critical dimension control of this system are great assets when facing the formidable challenges of advanced device manufacturing. " says Charlie King, Engineering Manager, Motorola, Austin TX.

The processing of Bilayer resist systems is relatively straight forward. Once the 248nm laser imaging and aqueous alkali developing process steps have been achieved the pattern is transferred by means of reactive ion etching into the polymeric under-layer. Subsequent pattern transfer into the wafer substrate is carried out through conventional etching processes.

Shipley Company is currently scaling up this new material set in order to meet the increasing level of customer interest. Samples to customers involved in sub 100nm lithographic development are presently available and can be obtained by contacting a local Shipley representative.

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