VISHAY LICENSES ITS TRENCHFET POWER MOSFET TECHNOLOGY TO KEC
16 December 2006 - Vishay Electronic

KEC and Vishay Intertechnology, Inc. announce that they have signed an agreement under which Vishay will license its Vishay Siliconix TrenchFET power MOSFET technology to KEC.

KEC is the largest manufacturer in Korea of discrete electronic components. In signing the agreement with Vishay, KEC will now be able to offer its customers power MOSFETs built on industry-leading TrenchFET technology and the first such products to be manufactured in Korea.

The Vishay Siliconix TrenchFET technology, which has progressed through several generations of advancements since its original introduction in the 1990s, enables power MOSFETs with the industry's lowest on-resistance, a figure of merit that translates into smaller, more power-efficient, and cooler-running devices and end products.

As the first manufacturer of Trench power MOSFETs in Korea, KEC will address a local market for power MOSFETs valued yearly at 250 billion Won ($266.7 million). Until now, demand for Trench power MOSFETs in Korea has been supplied entirely by imported devices.

Siliconix pioneered in the development of vertical trench power MOSFETs to overcome the limitations of planar DMOS devices, where a parasitic junction FET effect places a severe limit on the benefit of increasing transistor cell densities. TrenchFET power MOSFETs overcome this barrier by vertically redirecting the current flow in the device's channel in a direct path between the topside source and the backside drain contact. The result is a high level of scalability that allows successive generations of TrenchFET silicon technology to provide significant increases in power MOSFET performance.

http://www.vishay.com

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