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A new copper barrier slurry designed specifically to help customers deal with chemical mechanical planarization

Rohm & Haas Co : 17 June, 2006  (New Product)
Rohm and Haas Electronic Materials, CMP Technologies, today introduced a new copper barrier slurry designed specifically to help customers deal with chemical mechanical planarization in low-k integration schemes at the 90nm and 65nm technology nodes. Developed out of close collaborations with device manufacturers, the new LK393c4 copper barrier slurry's selectivity and removal rates enable users to achieve a 25 to 30 percent improvement in wafer throughput and cost of ownership over currently available slurry formulations.
The LK393c4 Barrier Slurry is the latest addition to the LK Series of barrier slurries, which CMP Technologies introduced last year. With a 1:1 selectivity of copper to low-k dielectric and a high TEOS rate, the non-selective alkaline LK393c4 slurry is ideal for TEOS capped low-k integration schemes. The LK393c4 slurry enables customers, during their copper barrier process, to maintain the copper topography results they achieved after copper clear.

Suitable for use with both soft pads and new-generation pad platforms designed for copper barrier applications, the LK393c4 slurry delivers the high removal rates at low-pressures needed for CMP in next generation copper barrier processes. The slurry is currently being ramped into high-volume manufacturing for 90nm low-k devices and being qualified for 65nm processes with logic device manufacturers and R&D and process development lines.

'We designed LK393c4 Barrier Slurry to support both 90nm and 65nm low-k integration schemes, making it easier for customers to extend integration knowledge and toolsets across multiple technology nodes,' said Rich Baker, vice president of slurry technology for Rohm and Haas Electronic Materials, CMP Technologies. 'Based on the technology requirements of our customers, we created our newest slurry to give users the flexibility to clear TEOS caps or maintain them, depending on individual process requirements.'

With the addition of LK393c4 to the LK Series, CMP Technologies gives device manufacturers a full suite of alkaline barrier slurries to choose from for CMP of low-k semiconductor devices in the 130nm through 65nm technology nodes. The LK Series also includes the non-selective LK301 Barrier Slurry and more selective LK309 Barrier Slurry. Taken together, the LK Series helps customers address a wide range of low-k/copper integration schemes, while maintaining high wafer throughput and maximum performance. Internal testing and end-user feedback have confirmed the consistency and repeatable performance of the LK Series slurries out to 14 days of dynamic pot life.

Currently available for sampling, CMP Technologies expects the LK393c4 will be commercially available in the third quarter of 2005. The material is supported by the company's world-class applications lab, which can assist customers with specific process requirements.

LK393c4 Barrier Slurry, along with the entire LK Series, is produced in the Rohm and Haas Electronic Materials slurry manufacturing facility in Newark, Delaware. This state-of-the-art facility is currently capable of supplying more than 3 million gallons of slurries a year.
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