Free Newsletter
Register for our Free Newsletters
Newsletter
Zones
Advanced Composites
LeftNav
Aerospace
LeftNav
Amorphous Metal Structures
LeftNav
Analysis and Simulation
LeftNav
Asbestos and Substitutes
LeftNav
Associations, Research Organisations and Universities
LeftNav
Automation Equipment
LeftNav
Automotive
LeftNav
Biomaterials
LeftNav
Building Materials
LeftNav
Bulk Handling and Storage
LeftNav
CFCs and Substitutes
LeftNav
Company
LeftNav
Components
LeftNav
Consultancy
LeftNav
View All
Other Carouselweb publications
Carousel Web
Defense File
New Materials
Pro Health Zone
Pro Manufacturing Zone
Pro Security Zone
Web Lec
Pro Engineering Zone
 
 
 
News

First power MOSFETs to combine WFET and TrenchFET Gen II technologies

Vishay Electronic : 10 May, 2004  (New Product)
Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc, today announced the release of the first two power MOSFETs to combine the extremely low Qgd values enabled by WFET technology with the very low rDS(on) values of TrenchFET Gen II technology.
The two power MOSFETs released today are designed for low-side operation in synchronous buck (single- and multi-phase configurations) dc to dc converters in notebook PCs, servers, and VRM modules, as well as in synchronous rectification in fixed telecom systems.

The new Si4368DY (PowerPAK SO-8) and Si7668DP (SO-8) feature on-resistance of 3.6 mΩ (at 4.5-V max.) and a low rDS(on)-times-Qgd value of 23 mΩnC for improvements of 25% and 54%, respectively, over specifications for competing MOSFET devices. Both devices provide an exceptionally low Qgd/Qgs ratio of 0.37 - also 54% better than competing devices, ensure high 'shoot-thru' immunity and to help keep Qg in check for reduced switching losses and more efficient dc-to-dc converter performance. The maximum gate threshold voltage for the Si4368DY and Si7668DP is 1.8 V. Packaged in the thermally enhanced PowerPAK SO-8 package, the Si7668DP also offers lower thermal resistance and greater power dissipation.

Vishay's innovative WFET technology uses a thicker gate oxide at the bottom of the devices' silicon trench to reduce Crss and Qgd with minimal impact on rDS(on) performance, boosting the efficiency of dc-to-dc converters. With the release of the new devices, designers can now build an all-WFET dc-to-dc converter using the Si4368DY or Si7668DP on the low side and the previously announced Si4390DY or Si7390DP on the high side. The WFET power MOSFETs' low conduction and switching losses translate directly into a 2% improvement in dc-to-dc converter efficiency over competing solutions in typical applications.

By applying WFET technology to its latest high-density silicon in the Si4368DY and Si7668DP, Vishay achieves a transistor density of 300 million cells per square inch and a low specific on-resistance of 12 mΩ/mm2 without compromising switching performance. As a result, the new devices enable design of faster, lighter, smaller, cooler, more efficient, and longer-running products with more robust feature sets.

All WFET power MOSFETs are 100% Rg-tested to ensure that devices perform as specified in high-frequency dc-to-dc applications.

Samples and production quantities of the new WFET TrenchFET Gen II power MOSFETs are available now, with lead times of 10-12 weeks for larger orders.
Bookmark and Share
 
Home I Editor's Blog I News by Zone I News by Date I News by Category I Special Reports I Directory I Events I Advertise I Submit Your News I About Us I Guides
 
   © 2012 NewMaterials.com
Netgains Logo