Free Newsletter
Register for our Free Newsletters
Newsletter
Zones
Advanced Composites
LeftNav
Aerospace
LeftNav
Amorphous Metal Structures
LeftNav
Analysis and Simulation
LeftNav
Asbestos and Substitutes
LeftNav
Associations, Research Organisations and Universities
LeftNav
Automation Equipment
LeftNav
Automotive
LeftNav
Biomaterials
LeftNav
Building Materials
LeftNav
Bulk Handling and Storage
LeftNav
CFCs and Substitutes
LeftNav
Company
LeftNav
Components
LeftNav
Consultancy
LeftNav
View All
Other Carouselweb publications
Carousel Web
Defense File
New Materials
Pro Health Zone
Pro Manufacturing Zone
Pro Security Zone
Web Lec
Pro Engineering Zone
 
 
 
News

Industry's first 30-V Power MOSFETs with on-resistance ratings at 2.5V reduce power consumption

Vishay Electronic : 12 October, 2001  (New Product)
The industry's first 30-V power MOSFETs specified for gate drives down to 2.5 V were announced todayby Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology. The three new n-channel TrenchFETs- one each in the TSOP-6, TSSOP-8, and PowerPAK 1212-8 packages- are designed for battery charger switching and protection applicationsin portable electronics including cell phones, PDAs, and pagers, as wellas 26- to 28-V ac adapters.
The industry's first 30-V power MOSFETs specified for gate drives down to 2.5 V were announced todayby Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology. The three new n-channel TrenchFETs- one each in the TSOP-6, TSSOP-8, and PowerPAK 1212-8 packages- are designed for battery charger switching and protection applicationsin portable electronics including cell phones, PDAs, and pagers, as wellas 26- to 28-V ac adapters.

Until now, designers had to work with on-resistance specifications for gate drives in the range of 4.5 V to 10 V when selecting a power MOSFET with a 30-V breakdown voltage. With rDS(on) specified down to 2.5 V, these three new devices will provide the voltage range designers need for higher-voltage portable applications while delivering low on-resistance performance across the whole 3- to 5-V operating range for batteries. As a result, end products will give users increased battery life and longer periods of use beforere charging is necessary.

The new 30-V devices are aimed at battery switching applications. Packagedin the new PowerPAK 1212-8, the Si7404DN combines on-resistance of just 22 mΩ at a 2.5-V gate drive with a low thermal resistance package measuring 10.56 mm2 with a height profile of just 1.07 mm. The new Si3434DV, in a TSOP-6 measuring 8.69 mm2, provides an on-resistance of50 mΩ at 2.5 V. The new Si6404DQhas an exceptionally low on-resistance of 14 mΩ at a 2.5-V gate drive and is packaged in a 20.46 mm2TSSOP-8.

Samples and production quantities of the Si3434DV, Si6404DQ, and Si7404DNare available now, with lead times of six weeks for larger orders.
Bookmark and Share
 
Home I Editor's Blog I News by Zone I News by Date I News by Category I Special Reports I Directory I Events I Advertise I Submit Your News I About Us I Guides
 
   © 2012 NewMaterials.com
Netgains Logo