Free Newsletter
Register for our Free Newsletters
Newsletter
Zones
Advanced Composites
LeftNav
Aerospace
LeftNav
Amorphous Metal Structures
LeftNav
Analysis and Simulation
LeftNav
Asbestos and Substitutes
LeftNav
Associations, Research Organisations and Universities
LeftNav
Automation Equipment
LeftNav
Automotive
LeftNav
Biomaterials
LeftNav
Building Materials
LeftNav
Bulk Handling and Storage
LeftNav
CFCs and Substitutes
LeftNav
Company
LeftNav
Components
LeftNav
Consultancy
LeftNav
View All
Other Carouselweb publications
Carousel Web
Defense File
New Materials
Pro Health Zone
Pro Manufacturing Zone
Pro Security Zone
Web Lec
Pro Engineering Zone
 
 
 
News

New 150-V high-barrier-height Schottky rectifiers offer low forward voltage drop

Vishay Electronic : 05 September, 2003  (New Product)
A new series of 150-V high-barrier-height Schottky rectifiers offering a low forward voltage drop and leakage current under high-temperature operating conditions was announced today by Vishay Intertechnology, Inc.
Intended for use in high-frequency inverters, freewheeling, switch-mode power supplies (SMPS), and polarity protection applications in power supplies and adapters, the Vishay Semiconductors MBR Series 150-V H-type dual-rectifier devices provide industry-leading specifications not only with respect to forward voltage and high reverse energy, but also for maximum average forward rectified current, 10 A in the TO-220 package outline.

Built on a proprietary Schottky barrier technology, the new devices offer a typical forward voltage drop as low as 0.65 V, typical leakage current as low as 0.15 mA at 125C, and high maximum operating junction temperature of 175C.

A reverse surge capability of 25 kV ESD and inductive reverse avalanche energy ratings up to 20 mJ enhance reliability. Forward voltage options of 10 A, 20 A, and 30 A are available for devices in TO-220, ITO-220, and TO-262 package outlines.

These specifications represent an order of magnitude improvement over previous-generation Schottky rectifiers, with a reduction of leakage current by as much as half and a four-fold improvement in avalanche energy.

The new devices are the latest in the Vishay 'H' series, which takes advantage of a phenomenon known as conductivity modulation to achieve low leakage current and a high operating temperature in a Schottky rectifier without increasing barrier height and thus worsening voltage drop performance.

The result is a device that combines low leakage current, a high operating temperature, and low forward voltage drops to allow efficient operation with low losses even during high-frequency and high-temperature operation.

H-type series devices' metal-silicon junction is built using a proprietary sputtering process that guarantees a well-controlled barrier height. The resulting majority carrier conduction causes a forward voltage drop that is lower than a p-n junction rectifier, with negligible reverse recovery time. An ion-implanted guardring technology provides excellent reverse energy capability, thereby ensuring overvoltage protection.

Samples and production quantities of the new H-type high-barrier-height Schottky rectifiers are available now, with lead times of four weeks for larger orders.
Bookmark and Share
 
Home I Editor's Blog I News by Zone I News by Date I News by Category I Special Reports I Directory I Events I Advertise I Submit Your News I About Us I Guides
 
   © 2012 NewMaterials.com
Netgains Logo