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New 150-V high-barrier-height Schottky rectifiers offer low forward voltage drop

Vishay Electronic : 05 September, 2003  (New Product)
A new series of 150-V high-barrier-height Schottky rectifiers offering a low forward voltage drop and leakage current under high-temperature operating conditions was announced today by Vishay Intertechnology, Inc.
Intended for use in high-frequency inverters, freewheeling, switch-mode power supplies (SMPS), and polarity protection applications in power supplies and adapters, the Vishay Semiconductors MBR Series 150-V H-type dual-rectifier devices provide industry-leading specifications not only with respect to forward voltage and high reverse energy, but also for maximum average forward rectified current, 10 A in the TO-220 package outline.

Built on a proprietary Schottky barrier technology, the new devices offer a typical forward voltage drop as low as 0.65 V, typical leakage current as low as 0.15 mA at 125C, and high maximum operating junction temperature of 175C.

A reverse surge capability of 25 kV ESD and inductive reverse avalanche energy ratings up to 20 mJ enhance reliability. Forward voltage options of 10 A, 20 A, and 30 A are available for devices in TO-220, ITO-220, and TO-262 package outlines.

These specifications represent an order of magnitude improvement over previous-generation Schottky rectifiers, with a reduction of leakage current by as much as half and a four-fold improvement in avalanche energy.

The new devices are the latest in the Vishay 'H' series, which takes advantage of a phenomenon known as conductivity modulation to achieve low leakage current and a high operating temperature in a Schottky rectifier without increasing barrier height and thus worsening voltage drop performance.

The result is a device that combines low leakage current, a high operating temperature, and low forward voltage drops to allow efficient operation with low losses even during high-frequency and high-temperature operation.

H-type series devices' metal-silicon junction is built using a proprietary sputtering process that guarantees a well-controlled barrier height. The resulting majority carrier conduction causes a forward voltage drop that is lower than a p-n junction rectifier, with negligible reverse recovery time. An ion-implanted guardring technology provides excellent reverse energy capability, thereby ensuring overvoltage protection.

Samples and production quantities of the new H-type high-barrier-height Schottky rectifiers are available now, with lead times of four weeks for larger orders.
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