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News

New 20-V VDS/20-V VGS MOSFETs provide on-resistance down to 3.2 mΩ

Vishay Electronic : 16 July, 2003  (New Product)
Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, today announced 12 new 20-V VDS/20-V VGS power MOSFETs in the thermally enhanced PowerPAK and D2PAK and conventional DPAK packages.
The new devices offer the industry's lowest on-resistance and the lowest on-resistance-times-gate-charge product of any 20-V VDS/20-V VGS thermally enhanced power MOSFETs.

Supply output current for CPU systems is increasing rapidly while voltage regulation across the CPU is decreasing. With low on-resistance and gate charge values, these new devices from Vishay Siliconix minimize conduction and switching losses for increased efficiency in 20-V server and desktop core dc-to-dc conversion applications. The devices' 20-V VDS/20-V VGS rating also serves to provide additional headroom in 12-V systems.

Thanks to advanced packaging techniques, these new devices can handle up to 70 A in the DPAK and 110 A in the D2PAK, which extends their application beyond servers and computers to automotive systems.

Vishay's SUM110N02-03P D2PAK leads the next-best device on the market with 20% lower on-resistance of 3.2 mΩ at 10 V, while the SUM40N02-12P provides the lowest rDS(on) x Qg product in the 20-V VDS/20-V VGS class of devices, just 90.

For DPAK-packaged devices, the new SUD70N02-04P offers 25% lower on-resistance than any competing device, with a maximum rating of just 3.7 mΩ. The SUD50N02-12P, meanwhile, provides the lowest rDS(on) x Qg product, just 90, among 20-V VDS/20-V VGS DPAK devices. This figure of 90 is among the lowest on the market even when compared with devices in the 25-V VDS/20-V VGS range.

All of the devices announced today intended for low-side applications are optimized with a QGD/QGS ratio of less than 1 to help prevent the MOSFET from going into a 'shoot-thru' situation during which both the high and low side are on, creating a short from the input voltage to ground.
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