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News

New barrier slurry optimized for low-stress/low-pressure chemical mechanical planarization

Rohm & Haas Co : 30 November, 2004  (New Product)
Rohm and Haas Electronic Materials CMP Technologies, today introduced another new barrier slurry optimized for low-stress/low-pressure chemical mechanical planarization of copper semiconductor devices. SSA Barrier Slurry, targeted at 90nm and 65nm CMP, provides consistent performance, excellent defectivity and a large processing window, leading to improved yields and cost of ownership for low-k applications.
Customer-proven in both capped and uncapped integration schemes, SSA Barrier Slurry minimizes microscratches, improves sheet resistance, and lowers overall defect counts versus conventional slurries.

High barrier removal rates at low pressure (1.5 psi) provide high and balanced throughput while minimizing film stress or delamination. The unique attributes of SSA Barrier Slurry address the growing requirements within the copper CMP industry for products and processes that can polish unique and varied combinations of barrier, cap/anti-reflective coating, and fragile low-k dielectric films quickly, gently and repeatedly, while minimizing feature topography and defectivity.

'SSA creates flexibility in customers' operations by allowing polishing on TEOS-capped low-k films to stop within the cap or directly on carbon-doped oxide materials themselves,' said Rich Baker, vice president of slurry technology for Rohm and Haas Electronic Materials CMP Technologies. 'For capped integration schemes, significant reduction in topography can be achieved during the barrier removal step without the compromise of high dielectric loss. SSA Barrier Slurry also contributes to some of the lowest defect counts we and our customers have ever experienced. Since removal rates are similar in both 200mm and 300mm processes, customers can easily scale processes with SSA Barrier Slurry between platforms. Additionally, SSA is compatible with our full line of pads: IC1000, Politex and latest generation pads.'

SSA Barrier Slurry is the first slurry to attain tantalum and tetraethylorthosilicate rates above 500/min at low pH, low wt% particles and very small particles while operating at 1.5 psi. This enables end-users to quickly remove various barrier and dielectric films in a gentle CMP process that protects the integrity of the fragile film stack while maximizing throughput, and minimizing topography, oxide loss and defectivity. The acidic pH of SSA Barrier Slurry also allows for a compatible and secure transition between acidic bulk copper CMP slurries and SSA on single-platen CMP platforms.

The introduction of SSA Barrier Slurry comes just weeks after Rohm and Haas Electronic Materials CMP Technologies announced the expansion of its slurry manufacturing operations in Newark, Delaware, which dedicated high-volume manufacturing space for new copper and barrier slurry products, including SSA, LK301, and LK309 Barrier Slurries for 90nm and 65nm CMP. This expansion provides flexible slurry manufacturing in a certified clean room environment and increases the facility's capacity by 3 million gallons per year. A state-of-the-art control system enables segregation of slurry production, eliminating all cross-contamination and particulate risks. This results in repeatable, high-quality products and production efficiency improvements.
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