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News

New devices take aim at emerging automotive, consumer and industrial applications

Vishay Electronic : 06 August, 2004  (Application Story)
A new family of high-speed infrared emitters offering outstanding levels of radiant power and intensity was announced today by Vishay Intertechnology, Inc.
Built on double hetero chip GaAlAs/GaAlAs technology, the new Vishay Semiconductors IR emitters offer improvements of up to 43% in radiant intensity compared with previous-generation devices, extending the range and reliability of infrared data transmission and light barrier systems in the automotive, consumer, and industrial environments.

The four devices released today feature an 870-nm peak wavelength and an energy-saving typical forward voltage of just 1.5 V.

For free air data transmission systems with high modulation frequencies or high data transmission rate requirements, such as infrared video data transmission between camcorders and TV sets, Vishay is offering two new emitters in the 5-mm round plastic T 1 package. The TSFF5410 combines a 22 angle of half intensity with typical radiant intensity of 70 mW/sr, while the TSFF5210 combines a 10 angle of half intensity with radiant intensity of 180 mW/sr. Both devices feature a high modulation bandwidth of 23 MHz and typical rise and fall times of just 15 ns.

For applications where a space-saving surface-mount device is required, such as high-speed IR data transmission and high-performance sensors, Vishay is introducing two new devices in the miniature PLCC-2 SMD package. Both devices offer a 60 angle of half intensity and typical radiant intensity of 10 mW/sr, with typical rise and fall times of 15 ns for the TSMF4710 (with 23-MHz modulation bandwidth) and 30 ns for the TSMF3710 (with 12-MHz modulation bandwidth).

Samples of the TSFF5410, TSFF5210, TSMF4710, and TSMF3710 are available now. Production quantities will be available in Q3 2004 with lead times of 12 weeks for larger orders.
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