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News

New PowerPAK SO-8 Power MOSFETs

Vishay Electronic : 05 October, 2002  (New Product)
To address the trend toward higher system power requirements and lower dc voltage levels in communications systems, Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. today announced three new PowerPAK power MOSFETs intended for Point of Load dc-to-dc conversion applications in fixed telecom systems.
To address the trend toward higher system power requirements and lower dc voltage levels in communications systems, Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. today announced three new PowerPAK power MOSFETs intended for Point of Load dc-to-dc conversion applications in fixed telecom systems.

As POL devices, the new Vishay Siliconix MOSFETs are designed for use in low-voltage step-down applications in 5-V and 3.3-V distributed bus architectures. Because switching the low-voltage rail on the secondary bus tends to cause the highest switching power losses within the system, it is important to use devices with low breakdown and gate-to-source voltages. The low VDS and VGS ratings of these new devices ensure minimal on-resistance and gate charge, resulting in better switching efficiency for this low-voltage environment.

To accommodate a variety of circuit topologies and allow for the best possible use of board space, the 12-V TrenchFET power MOSFETs announced today include a single n-channel (Si7882DP), a dual n-channel (Si7940DP), and a complementary (Si7540DP) device.
Packaged in the low thermal resistance PowerPAK SO-8, the Si7540DP, Si7882DP, and Si7940DP all offer industry-low on-resistance values. The PowerPAK devices' on-resistance times gate charge products are industry-best as well, resulting in lower switching and conduction losses and thus higher-efficiency dc-to-dc circuits. The new devices are optimized to provide enhanced efficiency at switching speeds greater than 500 kHz.

All three devices offer significantly lower thermal resistance compared to MOSFETs in the standard SO-8 package, while measuring just 6.15 mm by 5.15 mm with a low 1.07-mm height profile.
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