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News

New PowerPAK SO-8 Power MOSFETs with supereior thermal performance

Vishay Electronic : 15 March, 2002  (New Product)
Seven power MOSFETs in the new high-performance PowerPAK SO-8 family were announced today by Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology. Designed for dc-to-dc converter applications, the new Vishay Siliconix devices will be used in desktop PCs, notebooks, laptops, servers, routers, and networking systems, as well as in standalone converter modules.
With superior current and power dissipation capabilities, and a thinner profile than standard SO-8 MOSFETs, these new PowerPAK devices may be used in many applications to replace DPAK power MOSFETs with a device requiring half as much space on the PCB.

The Si7440DP, Si7446DP, and Si7840DP are single n-channel 30-V fast-switching MOSFETs designed to serve in synchronous buck dc-to-dc converters for computing applications. The Si7440DP is optimized for low-side synchronous rectifier operation with the lowest on-resistance of the three devices, just 6.5 mΩ at a 10-V gate drive, and a typical gate charge value of 29 nC. The Si7446DP features on-resistance of 7.5 mΩ at a 10-V gate drive and a typical gate charge value of 36 nC. Optimized for high-side operation, the Si7840DP features comparable specifications of 9.5 mΩ and 35 nC.

The dual n-channel 30-V Si7842DP and Si7844DP also are intended for synchronous buck dc-to-dc conversion, providing high component integration in space-constrained designs. The Si7842DP integrates a dual n-channel power MOSFET and a Schottky diode in one package, reducing component count and cost in applications with outputs up to 6 A. For applications with outputs exceeding 6 A, Vishay offers the Si7844DP dual MOSFET, which provides both high-side synchronous and low-side control operation in a single SO-8 package. The Si7842DP and Si7844DP both feature on-resistance of 22 mΩ at a 10-V gate drive and a typical gate charge value of 13 nC.

The n-channel 20-V Si7448DP and the PWM-optimized 40-V Si7848DP are intended, respectively, for operation as low-voltage and 5-V output secondary synchronous rectifiers in isolated dc-to-dc converters. The Si7448DP also is suitable for battery selection and protection in portable computers. The Si7448DP and Si7848DP respectively feature on-resistance of 9 mΩ and 6.5 mW at a 10-V gate drive, with typical gate charge values of 18.5 nC.

The PowerPAK devices' low on-resistance times gate charge product for these devices means lower switching and conduction losses and thus higher efficiency dc-to-dc circuits.

Compared with the standard SO-8 package, these new PowerPAK SO-8 devices deliver at least 21% higher maximum continuous drain current, dissipate at least 61% more power, and feature a 39% lower height profile. Their low thermal resistance enables these new MOSFETs to handle more power or run cooler, taking up less board space and resulting in thinner, less expensive end products.

Samples and production quantities of the Si7440DP, Si7446DP, Si7448DP, Si7840DP, Si7842DP, Si7844DP, and Si7848DP are available now, with lead times of four to six weeks for larger orders.
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