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New Vishay Siliconix Power MOSFETs for battery protection set new records

Vishay Electronic : 07 August, 2002  (New Product)
Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc, today announced five new n-channel TrenchFET power MOSFETs aimed at battery-protection applications in one- and two-cell lithium-ion and lithium-polymer battery packs and circuitry.
Among the devices released today are two new chipscale power MOSFETs that provide industry-low on-resistance-per-footprint area. For applications that require the lowest possible on-resistance, Vishay Siliconix provides the MICRO FOOT Si8900EDB, which features an on-resistance of just 24 mΩ at a 4.5-V gate drive and an average footprint area of 8.07 mm. If a smaller design is more important, the MICRO FOOT Si8902EDB offers on-resistance of 45 mΩ at a 4.5-V gate drive in an average footprint area of 3.68 mm.

These new bi-directional 20-V MICRO FOOT devices feature a profile of just 0.62 mm and fit easily on slim PCBs required in narrow, handheld electronics. MICRO FOOT devices save space by relying on a solder bump process and proprietary techniques developed at Siliconix to eliminate the need for an outer package to encase the power MOSFET die. Both the Si8900EDB and Si8902EDB provide 4,000-V ESD protection.

In applications such as wall adapters that require a 30-V device, the new bi-directional Si6876EDQ power MOSFET offers low on-resistance, just 30 mΩ at a 4.5-V gate drive, in a TSSOP-8 package. When a lower breakdown voltage is acceptable, the 20-V Si6880EDQ provides still lower on-resistance of 18 mΩ at a 4.5-V gate drive and is specified for operation down to 1.8 V. The Si6880EDQ also is available in the TSSOP-8 package. Both devices feature ESD protection of 4,000 V.

For applications demanding enhanced thermal performance, the 30-V Si7902EDN dual common-drain power MOSFET is available in a PowerPAK 1212-8 package with a low profile of just 1.07 mm and a footprint area of just 10.56 mm - about half the size of the TSSOP-8. The Si7902EDN features an on-resistance value of 28 mΩ at a 4.5-V gate drive and 3,000-V EDN protection.

The new common-drain devices provide two essential battery-protection functions: protecting against over-current and over-voltage conditions during charging and, with a reverse blocking function, preventing discharge back into the ac source once the battery is fully charged. Their extraordinarily low on-resistance helps to prolong battery life, extending talk and stand-by times in compact portable equipment including cell phones, pagers, and PDAs.

All five of the new power MOSFETs are rated for operation over a temperature range of -55C to +150C.

Samples and production quantities of the Si8900EDB, Si8902EDB, Si6876EDQ, Si6880EDQ, and Si7902EDN are available now, with lead times of 12 weeks for larger orders
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