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News

New Vishay siliconix power MOSFETs in thermally enhanced PowerPAK 1212 8 package

Vishay Electronic : 26 April, 2006  (New Product)
Seventeen new power MOSFETs that offer exceptionally low on-resistance values down to 3.7 milliohms in the compact PowerPAK 1212 8 package were released today by Vishay Intertechnology, Inc. These TrenchFET Gen II devices deliver significant space savings with dimensions of just 3.3 mm by 3.3 mm by 1 mm, just 1/3 the size of the SO 8 package, as well as low thermal resistance of 2 degrees Celsius per Watt for an eightfold improvement when compared with SO 8 devices.
Seventeen new power MOSFETs that offer exceptionally low on-resistance values down to 3.7 milliohms in the compact PowerPAK 1212 8 package were released today by Vishay Intertechnology, Inc.

These TrenchFET Gen II devices deliver significant space savings with dimensions of just 3.3 mm by 3.3 mm by 1 mm, just 1/3 the size of the SO 8 package, as well as low thermal resistance of 2 degrees Celsius per Watt for an eightfold improvement when compared with SO 8 devices.

Intended for synchronous rectification, synchronous buck, and intermediate switching applications in point of load converters and high-density dc-to-dc converters used in datacom systems, the new power MOSFETs enable designers to reduce board space dramatically and/or increase functionality without sacrificing performance. With their excellent electrical performance, the power MOSFETs introduced today serve as a viable replacement for SO-8 devices in many applications.

The 12-V through 40-V single n-channel devices released today feature on-resistance values ranging from 3.7 milliohms to 10 milliohms at a 4.5-V gate drive, and they include the 12-V Si7104DN, 20-V Si7106DN, Si7108DN, and Si7110DN; 30-V Si7112DN and Si7114DN; and 40-V Si7116DN.

Dual n-channel devices released today offer on-resistance values down to 36 milliohms and include the 30-V Si7212DN and Si7214DN, 40-V Si7222DN, and 60-V Si7220DN.

Also being released today in the PowerPAK 1212-8 package are the single-channel 60 V Si7120DN, 75-V Si7812DN, 150 V Si7818DN, 220-V Si7302DN, and 250-V Si7802DN. These devices feature on-resistance values ranging from 135 milliohms to 435 milliohms at a 10-V gate drive. The 200-V Si7820DN was previously released.

Samples and production quantities of the new power MOSFETs in the PowerPAK 1212-8 package are available now, with lead times of 12 weeks for larger orders.
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