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News

Rohm and Hass's new 193 nm photoresist optimized has been named a Process of Record by IMEC

Rohm & Haas Co : 07 June, 2006  (Company News)
Rohm and Haas Electronic Materials, Microelectronic Technologies, a leading supplier of advanced lithography materials and processes for the semiconductor industry, announced that its 193 nm photoresist optimized for immersion contact hole imaging has been named a Process of Record by IMEC, the Interuniversity Microelectronics Center.
Rohm and Haas Electronic Materials, Microelectronic Technologies, a leading supplier of advanced lithography materials and processes for the semiconductor industry, announced that its 193 nm photoresist optimized for immersion contact hole imaging has been named a Process of Record by IMEC, the Interuniversity Microelectronics Center. IMEC, a renowned independent research center in nanoelectronics and nanotechnology, has selected Rohm and Haas' EPIC 2330 193 nm photoresist as a baseline material for 65 nanometer immersion process.

'We're pleased IMEC has recognized EPIC 2330 for immersion contact hole imaging,' said Dr. Robert Kavanagh, 193 nm marketing manager, Microelectronic Technologies, Rohm and Haas Electronic Materials. 'Investment and extensive research in our EPIC series photoresists has paid off with impressive performance characteristics, including excellent hole circularity and pattern smoothness with leading-edge depth-of-focus for both dense and isolated imaging. And this resist exhibits minimal difference when patterned with either conventional dry or immersion exposure. It's an excellent candidate for crossover studies for customers who want to benchmark dry and immersion processes,' Kavanagh said.

In immersion applications, EPIC 2330 can be used without a topcoat, but is also fully compatible with topcoats. This provides customers with valuable flexibility as they move from using topcoats in early development phases to a topcoat-free approach longer term. This second-generation resist is also optimized to meet or exceed water leaching specification set by scanner manufacturers.

Recently, Rohm and Haas Electronic Materials introduced its fourth generation immersion photoresist, EPIC 3000 series, which has been designed and optimized in preparation for the latest 45 nm node production level immersion exposure systems. In studies on industry-leading exposure systems, EPIC 3000 series photoresist demonstrated no watermark defects. This advanced photoresist is now being optimized for the specific imaging and throughput requirements of device manufacturers.

'Providing customers with advanced 193 photoresist and related lithography materials is one of our highest priorities,' said Dr. Yi Hyon Paik, president, Microelectronic Technologies, Rohm and Haas Electronic Materials. 'We have made tremendous progress, particularly in our immersion program, and we'll continue our aggressive focus to support customers' current and future material needs.'
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