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Shipley Company and Therma-Wave announce new advanced nano-metrology JDA

Rohm & Haas Co : 19 December, 2002  (New Product)
Shipley Company, a world leader in electronic materials and process innovations for advanced circuit board technology, semiconductor manufacturing and advanced packaging today announced it signed a joint development agreement with Therma-Wave, Inc., Fremont, California. The companies plan to develop scatterometric methods to better measure 130nm photoresist features for poly silicon gate and shallow trench applications.
The measurement of critical dimensions of less than 200nm has posed considerable difficulties using conventional CD-SEM techniques due primarily to charging and subsequent heating of resist features during the measurement process. The absorbed energy, as a consequence of measurement, degrades the polymeric resist materials and causes them to shrink.

Shipley and Therma-Wave intend to use Therma-Wave RT/CD a real-time, critical dimension system, installed on a Therma-Wave Opti-Probe 5230 system. The RT/CD system uses scattered light across wavelengths from 185nm800nm to measure DUV and 193nm resist patterns without heating the measured features. When fully developed, it is expected that the RT/CD system will have the potential to measure features required for the 65nm technology node and beyond.

Scatterometry for CD metrology uses the premise that a single, unique set of properties describes the changes in a known light beam as it is reflected across an area of tens of periods of a regular, grating-like pattern. For Shipley's application with RT/CD, the grating is a photoresist pattern. The measurement solution is dependant on many characteristics of the light path including the film stack, the CD size and the pitch (line and space dimensions). Most currently available scatterometry solutions, due to the complexity of calculations, require a large database of libraries to allow a real-time search for solutions. Also, many competitive techniques do not present enough data to support the calculation of an unambiguous solution. Only recently has a real-time solution emerged.

'Since our initial studies began approximately two years ago, we are realizing the power that this technique offers in reliably measuring photoresist patterns of 130nm and below,' stated Gary S. Calabrese, Shipley Vice President and Chief Technology Officer of Rohm and Haas Electronic Materials. 'Shipley has demonstrated the ability to measure with a 3-sigma precision of better than 1nm, at 100nm features with the early systems we've tested. The refinements, currently available on the RT/CD system, allow for 'real-time' measurement of various critical dimensions eliminating the time-consuming generation of 'look-up' tables required by competitive systems,' said Calabrese.

Additionally, Shipley and Therma-Wave intend to place an Opti-Probe 7360 tool with integrated RT/CD functionality at the new Shipley Advanced Technology Center. Numerous resist formulations for 248nm and 193nm lithography will be tested throughout the term of the joint development agreement. Shipley anticipates having a deep understanding of the technology and equipment in advance of developing its next generation resist products and processes.
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