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Siliconix launches record-breaking chipscale MOSFET and analog switch

Vishay Electronic : 29 April, 2002  (New Product)
Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc., today launched three new chipscale MICRO FOOT devices, including the industry's first 12-V chipscale MOSFET and the industry's first chipscale MOSFET and analog switch rated for operation at 1.8 V.
The new Vishay Siliconix MICRO FOOT devices use a solder bump process along with proprietary techniques developed at Siliconix to eliminate the need for an outer package to encase the power MOSFET die, greatly reducing the size of the devices required to switch power and analog signals in cell phones and other handheld electronic systems.

Measuring just 1.6 mm by 1.6 mm with a 0.65 height profile, the new single p-channel Si8405DB MICRO FOOT power MOSFET is the industry's first such device with a 12-V breakdown voltage and the industry's first chipscale MOSFET rated for operation at a -1.8-V gate drive. On-resistance specifications are the lowest ever recorded for any chipscale MOSFET as well, ranging from 55 mΩ at a -4.5-V gate drive to 90 mΩ at -1.8-V.

For applications where a higher breakdown voltage is needed, Siliconix offers the MICRO FOOT Si8401DB, a single p-channel device with a drain-to-source voltage of 20 V and maximum on-resistance of 65 mΩ at a -4.5-V gate drive or 95 mΩ at a -2.5-V gate drive.

The industry's first chipscale analog switch rated for operation at 1.8 V is the new Vishay Siliconix DG3000. This new MICRO FOOT device, measuring 1.07 mm by 1.57 mm with a 0.7-mm height profile, features an industry-best charge injection specification of 5 pC (compared with 13 pC for the next closest device) which reduces glitching and thus improves accuracy. The DG3000 also features the lowest on-resistance of any chipscale analog switch capable of handling frequencies over 100 MHz just 1.4 Ω reducing time between charges in battery-operated systems.

Configured for single-pole, double-throw operation, the DG3000 is about a third thinner and occupies about a fifth of the footprint as comparable devices in the SC-70 or TSOP-6 packages, but still offers an order of magnitude improvement in on-resistance. By combining 1.8-V operation, low on-resistance, and low charge injection, the DG3000 will allow designers to implement switching and voice multiplexing applications in cell phones and other portable devices with lower power consumption and in less space than any previous solution.

Samples and production quantities of the Si8401DB, Si8405DB, and DG3000 are available now, with lead times of four weeks for larger orders.
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