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News

Siliconix targets automotive 12-V boardnet with new P-channel −40-V and −60-V TrenchFETPower MOSFETs

Vishay Electronic : 29 March, 2004  (New Product)
Automotive 12-V boardnet high-side switches and electric motor drives are the target applications for a record-setting family of p-channel MOSFETs announced today by Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc.
Automotive 12-V boardnet high-side switches and electric motor drives are the target applications for a record-setting family of p-channel MOSFETs announced today by Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc.

The new −40-V and −60-V devices are the first with these breakdown voltage ratings to be built using Vishay's advanced p-channel technology, which reduces MOSFET on-resistance to record-low levels. Maximum rDS(on) ratings range from 15 mΩ down to 4.2.mΩ for the six devices released today.

Because p-channel MOSFETs require no additional high-side driver circuitry for turn-on, these new −40-V and −60-V TrenchFETs will help designers to reduce component count and improve reliability in automotive and industrial systems compared with n-channel solutions.

When used to replace previous-generation p-channel devices, the new TrenchFETs give designers the opportunity to lower system power consumption as well. Compared with the next-best p-channel MOSFETs on the market with the same voltage ratings and package outlines, conduction losses for the new devices are reduced by up to 90%.

Package options for the −40-V devices are the standard DPAK (SUD50P04-09L), the thermally enhanced D2PAK (SUM110P04-04L), and the lead-less, 1.07 mm-high PowerPAK SO-8 (Si7463DP). The −60-V TrenchFETs also are offered in the DPAK (SUD50P06-15L), the thermally enhanced D2PAK (SUM110P06-07L), and PowerPAK SO-8 (Si7461DP). The DPAK and D2PAK devices are rated for a maximum junction temperature of 175 C, while the PowerPAK SO-8 TrenchFETs are rated for up to 150 C.
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