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Vishay launches 240-milliohm, 200-V switching MOSFET in 3.3-mm by 3.3-mm PowerPAK 1212-8
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Vishay Electronic
: 07 July, 2004 (New Product) |
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In a critical advance that will help designers meet the stringent power-density and packaging requirements of new sub-brick power architectures, Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc, today announced the industry's first 200 V power MOSFET available in the compact PowerPAK 1212 8 package. |
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In a critical advance that will help designers meet the stringent power-density and packaging requirements of new sub-brick power architectures, Siliconix incorporated, an 80.4%-owned subsidiary of Vishay Intertechnology, Inc, today announced the industry's first 200 V power MOSFET available in the compact PowerPAK 1212 8 package.
Intended for primary dc-to-dc switching applications for power supplies in fixed telecom networks and routers, the new n channel Si7820DN TrenchFET power MOSFET is the smallest 200-V device on the market suited for power switching.
The PowerPAK 1212 8 package measures 3.3 mm by 3.3 mm with a low 1.07 mm height profile, offering smaller dimensions than SO 8 solutions while providing greatly superior thermal performance. Power dissipation for the PowerPAK 1212 8 package is 3.8 W, nearly double that of any MOSFET device with a TSSOP-8-size footprint or smaller. Typical thermal resistance is just 1.9 °C/W compared to 16 °C/W for the SO-8.
In addition to space savings and its high voltage capability, the Si7820DN features on-resistance of 240 mΩ and a typical gate charge of 12.1 nC (VGS=10 V). The new power MOSFET is rated for an operating junction and storage temperature range of −55 °C to +150 °C.
Samples of the 200 V Si7820DN TrenchFET power MOSFET are available now, with lead times of 10 to 12 weeks for production quantities. |
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